GROWTH AND PROPERTIES OF CUINS2 THIN-FILMS

Single phase copper indium disulphide (CuInS2) thin films of thickness between 60 nm and 650 nm with the chalcopyrite structure are obtained on NaCl and glass substrates by flash evaporation. The films were fou nd to be it-type semiconducting, The influence of the substrate temper ature on the crystallinity, conductivity, activation energy and optica l band gap was studied. An improvement in the film properties could be achieved up to a substrate temperature of 523 K at a molybdenum sourc e temperature of 1873 K.