LATTICE MISMATCH AND SURFACE-MORPHOLOGY STUDIES OF INXGA1-XAS EPILAYERS GROWN ON GAAS SUBSTRATES

Authors
PAL R SINGH M MURLIDHARAN R AGARWAL SK PAL D BOSE DN
Citation
R. Pal et al., LATTICE MISMATCH AND SURFACE-MORPHOLOGY STUDIES OF INXGA1-XAS EPILAYERS GROWN ON GAAS SUBSTRATES, Bulletin of Materials Science, 21(4), 1998, pp. 313-316
Citations number
16
Categorie Soggetti
Material Science
Journal title
Bulletin of Materials Science → ACNP
ISSN journal
02504707
Volume
21
Issue
4
Year of publication
1998
Pages
313 - 316
Database
ISI
SICI code
0250-4707(1998)21:4<313:LMASSO>2.0.ZU;2-#
Abstract
InxGa1-xAs (0.06 less than or equal to x less than or equal to 0.35) e pilayers were grown on GaAs substrates by atmospheric pressure metal o rganic chemical vapour deposition technique. Surface morphology and la ttice mismatch in the InGaAs/GaAs films of different compositions were studied. Cross-hatched patterns were observed on the surface of the e pilayers for bulk alloy composition up to x approximate to 0.25. For x > 0.3, a rough textured surface morphology was observed.