ONE-ATOM POINT CONTACTS

Citation
Jm. Krans et al., ONE-ATOM POINT CONTACTS, Physical review. B, Condensed matter, 48(19), 1993, pp. 14721-14724
Citations number
22
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
48
Issue
19
Year of publication
1993
Pages
14721 - 14724
Database
ISI
SICI code
0163-1829(1993)48:19<14721:OPC>2.0.ZU;2-G
Abstract
A mechanically controllable break junction is used to study the transi tion between vacuum tunneling and contact for three different metals. In the tunnel regime a faster-than-exponential behavior is seen at clo se distances, followed by a jump to contact, both interpreted as being due to metal bonding forces. We show that stable contacts of a single atom can be formed. For Cu, the conductance value for a one-atom cont act is very close to 2e2/h. For Al this value is less well defined but of similar magnitude, while for Pt it is noticeably higher, implying that the electronic structure of the atoms is relevant to the one-atom conduction process.