COMBINATORIAL SYNTHESIS AND EVALUATION OF EPITAXIAL FERROELECTRIC DEVICE LIBRARIES

Citation
I. Takeuchi et al., COMBINATORIAL SYNTHESIS AND EVALUATION OF EPITAXIAL FERROELECTRIC DEVICE LIBRARIES, Applied physics letters, 73(7), 1998, pp. 894-896
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
73
Issue
7
Year of publication
1998
Pages
894 - 896
Database
ISI
SICI code
0003-6951(1998)73:7<894:CSAEOE>2.0.ZU;2-1
Abstract
Combinatorial libraries of parallel-plate capacitors, consisting of Pt and La0.5Sr0.5CoO3 electrodes and a doped BaxSr1-xTiO3 dielectric lay er, have been fabricated and analyzed to systematically study the effe cts of dopants on device performance. Epitaxial heterostructure librar ies with sharp interfaces were generated from amorphous layers on LaAl O3 substrates. Two hundred and forty different host/dopant combination s were synthesized on a 1/2 in. by 1/2 in, substrate, with 23 capacito rs for each combination. Addition of 1.5 mol % W was found to increase the figure of merit (epsilon/I-leak) 220-fold and reduce the high-fre quency (MHz and GHz) loss tangent by fourfold. (C) 1998 American Insti tute of Physics.