I. Takeuchi et al., COMBINATORIAL SYNTHESIS AND EVALUATION OF EPITAXIAL FERROELECTRIC DEVICE LIBRARIES, Applied physics letters, 73(7), 1998, pp. 894-896
Combinatorial libraries of parallel-plate capacitors, consisting of Pt
and La0.5Sr0.5CoO3 electrodes and a doped BaxSr1-xTiO3 dielectric lay
er, have been fabricated and analyzed to systematically study the effe
cts of dopants on device performance. Epitaxial heterostructure librar
ies with sharp interfaces were generated from amorphous layers on LaAl
O3 substrates. Two hundred and forty different host/dopant combination
s were synthesized on a 1/2 in. by 1/2 in, substrate, with 23 capacito
rs for each combination. Addition of 1.5 mol % W was found to increase
the figure of merit (epsilon/I-leak) 220-fold and reduce the high-fre
quency (MHz and GHz) loss tangent by fourfold. (C) 1998 American Insti
tute of Physics.