FERROELECTRIC CHARACTERIZATION OF HIGHLY (0001)-ORIENTED YMNO3 THIN-FILMS GROWN BY CHEMICAL SOLUTION DEPOSITION

Highly (0001)-oriented thin films of YMnO3 were grown directly on Si s ubstrates by chemical solution deposition. The crystallinity of the fi lms was investigated by using x-ray diffraction: theta-2 theta scan, r ocking curve, and pole figure. Analysis of the x-ray photoelectron spe ctroscopy data and Rutherford backscattering spectroscopy spectrum sho wed that the films had a single phase of stoichiometric YMnO3. The fer roelectric properties of YMnO3 were investigated by measuring the temp erature dependence of the capacitance-voltage characteristics in the m etal/ferroelectric/semiconductor structure. Screening of the ferroelec tricity of YMnO3 thin him at room temperature was discussed in conjunc tion with the charge effects. (C) 1998 American Institute of Physics.