We present an ab initio study of the energetics and atomic structure o
f films consisting of approximately 1 bilayer of AIN on the c-plane sa
pphire surface. We show that these films are unstable with respect to
three-dimensional islands, and we attribute this instability to both s
train and chemical mismatch between the oxide and the nitride. The rel
ative stability of the AIN films depends on the chemical potentials of
Al and N. Films having (0001) polarity are expected to form under Al-
rich conditions. Films with (000 (1) over bar) polarity appear to form
only for undersaturation conditions of bulk AIN in the initial stages
of growth. (C) 1998 American Institute of Physics.