MODEL OF LEAKAGE CHARACTERISTICS OF (BA, SR)TIO3 THIN-FILMS

We have investigated the dependence of leakage current and capacitance of Pt/Ba0.5Sr0.5TiO3/Pt capacitors on annealing temperature under hig h vacuum conditions. It is observed that leakage currents increase asy mmetrically for negative and positive bias voltage with increasing ann ealing temperature. A model of leakage current and capacitance charact eristics has been proposed on the assumption of generation of oxygen v acancies by annealing at the interfaces of the dielectric film adjacen t to the Pt electrodes, The model predicts the oxygen vacancies of abo ut 10(20) cm(.)(-3) (C) 1998 American Institute of Physics.