GROWTH AND CHARACTERIZATION OF INGAAS INGAP QUANTUM DOTS FOR MIDINFRARED PHOTOCONDUCTIVE DETECTOR/

Authors
KIM S MOHSENI H ERDTMANN M MICHEL E JELEN C RAZEGHI M
Citation
S. Kim et al., GROWTH AND CHARACTERIZATION OF INGAAS INGAP QUANTUM DOTS FOR MIDINFRARED PHOTOCONDUCTIVE DETECTOR/, Applied physics letters, 73(7), 1998, pp. 963-965
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
73
Issue
7
Year of publication
1998
Pages
963 - 965
Database
ISI
SICI code
0003-6951(1998)73:7<963:GACOII>2.0.ZU;2-M
Abstract
We report InGaAs quantum dot intersubband infrared photodetectors grow n by low-pressure metalorganic chemical vapor deposition on semi-insul ating GaAs substrates. The optimum growth conditions were studied to o btain uniform InGaAs quantum dots constructed in an InGaP matrix. Norm al incidence photoconductivity was observed at a peak wavelength of 5. 5 mu m with a high responsivity of 130 mA/W and a detectivity of 4.74x 10(7) cm H-1/2/W at 77 K. (C) 1998 American Institute of Physics.