NONLINEAR ELECTRON-TRANSPORT CHARACTERISTICS IN ULTRATHIN WIRES OF RECRYSTALLIZED HYDROGENATED AMORPHOUS-SILICON

Authors
NG V AHMED H SHIMADA T
Citation
V. Ng et al., NONLINEAR ELECTRON-TRANSPORT CHARACTERISTICS IN ULTRATHIN WIRES OF RECRYSTALLIZED HYDROGENATED AMORPHOUS-SILICON, Applied physics letters, 73(7), 1998, pp. 972-974
Citations number
4
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
73
Issue
7
Year of publication
1998
Pages
972 - 974
Database
ISI
SICI code
0003-6951(1998)73:7<972:NECIUW>2.0.ZU;2-2
Abstract
Electron transport in nanowires of hydrogenated amorphous silicon recr ystallized by electron beam annealing has been studied. Evidence for s ingle electron effects with I-V characteristics at low temperature has been presented. The region of the nonlinear I-V characteristics is mo deled as a hopping conduction between limited number of trapping sites in amorphous regions or at grain boundaries with Coulomb blockade eff ect. Transmission electron microscopy is used to support this hypothes is. (C) 1998 American Institute of Physics.