STRUCTURE AND TEMPERATURE-DEPENDENCE OF RESISTANCE IN VERY HIGH-RESISTIVITY THICK-FILMS

Microstructures have been examined for superhigh-resistivity thick fil ms having typical resistivities of 10(8)-10(11) Omega/square and based on Sn0.9Sb0.1O2-Sb2O4 and Pb2Ru2O6 powders, amorphous glass, and crys tallizing glass. The temperature dependence of the resistance has been measured at 77-870 K. Films based on Sn0.9Sb0.1O2-Sb2O4 mixtures have a chain structure, which consists of a network of particles of the co nducting phase and groups of them, which are arranged around the parti cles of glass. There is a random distribution of the Pb2Ru2O6 particle s in the glass matrix, and mutual diffusion occurs between the phases. The temperature dependence of the resistance is of activation type, w hich is due to carrier transport through the thin glass layers.