H. Yao et K. Itaya, ATOMICALLY RESOLVED SCANNING-TUNNELING-MICROSCOPY IMAGES OF INP(001),(111)A, AND (111)B SURFACES IN SULFURIC-ACID-SOLUTION, Journal of the Electrochemical Society, 145(9), 1998, pp. 3090-3094
Citations number
22
Categorie Soggetti
Electrochemistry,"Materials Science, Coatings & Films
Electrochemical scanning tunneling microscopy (STM) was used to study
n type InP surfaces in an aqueous sulfuric acid solution. Well-defined
InP(001), (111)A, and (111)B surfaces were prepared by chemical etchi
ng. in 1 M HCl. Cathodic polarization of the InP electrodes effectivel
y protected the surfaces from oxidation. However, when the potential w
as made too negative, the decomposition of InP surfaces inhibited stab
le STM imaging. Atomically flat terrace-step structures were consisten
tly observed on all surfaces in 0.05 M H2SO4 under suitable cathodic p
otentials. Steps observed on these surfaces corresponded to the monola
yer steps with heights of 0.29 and 0.34 nm for the (001) and (111) sur
faces, respectively. Atomically resolved STM images of InP electrodes
were successfully obtained on the terraces for the first time. Ln situ
STM revealed that all these surfaces possess a (1 x 1) structure with
an interatomic distance of 0.42 nm. These results clearly demonstrate
that the ideal InP(001), (111)A, and (111)B surfaces can be exposed i
n H2SO4 solution by the chemical etching method.