NUCLEATION AND FORMATION OF OXYGEN PRECIPITATES IN CZOCHRALSKI-GROWN SILICON ANNEALED UNDER UNIFORM STRESS CONDITIONS

Annealing of Cz-Si at enhanced pressures gives rise to the creation of oxygen precipitates with smaller sizes and higher concentrations in c omparison to the case of annealing at atmospheric pressure. This effec t is more pronounced for pressures above 0.1 GPa, The pressure (about 1.0 GPa) treatment at temperatures below 900 degrees C leads to the st abilization of the OP precursors (of the local oxygen reach areas) and after prolonged annealing to their coexistence with OF. The last effe ct is most likely connected with a decrease in the OP size with pressu re to some critical value which is lower than that needed for OP exist ence. (C) 1998 Elsevier Science B.V. All rights reserved.