ELECTRON TRAPS IN WIDE-GAP N-HG0.3CD0.7TE CHARACTERIZED BY TIME-RESOLVED PHOTOCONDUCTIVITY

Authors
HUANG JX BARUT G LANGE J
Citation
Jx. Huang et al., ELECTRON TRAPS IN WIDE-GAP N-HG0.3CD0.7TE CHARACTERIZED BY TIME-RESOLVED PHOTOCONDUCTIVITY, Applied physics. A, Solids and surfaces, 57(5), 1993, pp. 427-430
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Applied physics. A, Solids and surfaces → ACNP
ISSN journal
07217250
Volume
57
Issue
5
Year of publication
1993
Pages
427 - 430
Database
ISI
SICI code
0721-7250(1993)57:5<427:ETIWNC>2.0.ZU;2-7
Abstract
Time-resolved photoconductivity measurements have been used to charact erize electron traps in wide-gap n-HgO0.3Cd0.7Te for the first time. T he characterization was made possible by combining the time-resolved p hotoconductive data with the analytical method conventionally used in DLTS spectroscopy. Two electron traps were found in the band gap with 61 meV and 79 meV below the conduction band edge, their concentrations are 1.1 x 10(13) cm-3 and 5.8 x 10(11) cm-3, respectively. Compared w ith DLTS spectroscopy, this characterization method markedly simplifie s sample preparation and experimental procedure.