THE COALESCENCE OF SILICON LAYERS GROWN OVER SIO2 BY LIQUID-PHASE EPITAXY .2. STRAINS AND DEFECT NUCLEATION STUDIED BY TRANSMISSION ELECTRON-MICROSCOPY

The coalescence of epitaxial silicon layers which are grown laterally over oxidized and patterned Si substrates is studied using various tec hniques of transmission electron microscopy (TEM). The epitaxial layer s, the seam of coalescence and lattice defects formed by the coalescen ce are characterized. The epitaxial layer as a whole is found to be be nt with respect to the substrate. Such misorientations, together with facetting of the growth fronts of the coalescing layers, may lead to t he formation of solvent inclusions, dislocations and stacking faults a t the seam of coalescence. However, under favourable conditions, the s eam is found to be entirely defect-free.