EXPERIMENTAL-ANALYSIS OF TEMPERATURE-DEPENDENCE OF OSCILLATION WAVELENGTH IN QUANTUM-WELL FP SEMICONDUCTOR-LASERS

We experimentally evaluated the temperature dependence of the oscillat ion wavelength in 1.3-mu m GaInAsP-InP strained multiple-quantum-well (MQW) semiconductor lasers comparing with bulk lasers, The temperature dependence of the oscillation wavelength can be characterized newly i ntroduced two coefficients a(1) and a(2) which are the gain peak wavel ength shift coefficients under the constant current condition and unde r the constant temperature condition, respectively. These two coeffici ents of various MQW structure lasers are the same as those of bulk las ers, This result means that the oscillation wavelength shift coefficie nt d lambda/dT is only a function of the characteristic temperature T- 0. The higher T-0 induces the large temperature dependence of the osci llation wavelength. When the characteristic temperature T-0 is equal t o the characteristic temperature T-Itr, of the transparency current I- tr, the oscillation wavelength shift coefficient d lambda/dT takes the maximum value which is determined by the thermally induced bandgap na rrowing effect d lambda(g)/dT. One possibility to solve the paradox be tween a high characteristic temperature T-0 and the small temperature dependence of the oscillation wavelength is the introduction of the te mperature-independent leakage current.