ZNSE GROWTH ON LATTICE-MATCHED INXGA1-XAS SUBSTRATES

Authors
HEUN S LANTIER R PAGGEL JJ SORBA L RUBINI S BONANNI B FRANCIOSI A LOMASCOLO M CINGOLANI R BONARD JM GANIERE JD
Citation
S. Heun et al., ZNSE GROWTH ON LATTICE-MATCHED INXGA1-XAS SUBSTRATES, Surface review and letters, 5(3-4), 1998, pp. 693-700
Citations number
37
Categorie Soggetti
Physics, Condensed Matter","Physics, Atomic, Molecular & Chemical","Material Science
Journal title
Surface review and letters → ACNP
ISSN journal
0218625X
Volume
5
Issue
3-4
Year of publication
1998
Pages
693 - 700
Database
ISI
SICI code
0218-625X(1998)5:3-4<693:ZGOLIS>2.0.ZU;2-I
Abstract
The properties of ZnSe epilayers fabricated by molecular beam epitaxy on lattice-matched InxGa1-xAs buffers grown on GaAs(001) substrates ha ve been investigated by means of photoluminescence spectroscopy and tr ansmission electron microscopy. For suitable values of x and ternary-l ayer thickness, the partial character of the strain relaxation within the III-V layer can be compensated for, minimizing the residual strain in the ZnSe overlayer. Large reductions in the dislocation density an d Y-line emission as compared to conventional ZnSe/GaAs heterostructur es can be reproducibly obtained.