INVESTIGATION OF VACANCY-TYPE DEFECTS IN P-IMPLANTED 6H-SIC USING MONOENERGETIC POSITRON BEAMS()

Vacancy-type defects and their annealing properties for 200 keV P+-imp lanted 6H-SiC were studied using monoenergetic positron beams. For the specimen with a dose of 1 x 10(13)/cm(2), the mean size of the open v olume of defects was estimated to be close to that of divacancies. Bas ed on the annealing behavior of the S parameter corresponding to the a nnihilation of positrons trapped by vacancy-type defects, the temperat ure range for the annealing of vacancy-type defects was divided into t hree stages. Annealing behavior in stages I (200-700 degrees C) and II (70-1000 degrees C) was identified as the agglomeration of defects du e to migrations of monovacancies and vacancy complexes such as divacan cies, respectively. In stage II, near the defect-free region, the aggl omeration of defects was suppressed by recombination of vacancy-type d efects and interstitials. Stage III (1000-1300 degrees C) was assigned to be the formation of extended defects and their recovery processes. The annealing behavior of the amorphous region introduced by ion impl antation was also discussed.