CHARACTERISTICS OF SELF-ASSEMBLED INSB DOTS GROWN ON (100)ALGASB BY MOLECULAR-BEAM EPITAXY

A self-assembling method to produce dense InSb quantum dots on Al0.5Ga 0.5Sb is reported. Samples were grown on (100)-oriented GaAs substrate s by molecular beam epitaxy and characterized by reflection high-energ y electron diffraction, atomic force microscopy, Raman spectroscopy an d photoluminescence. Low-temperature deposition of InSb combined with an in situ post annealing resulted in small-sized three-dimensional is lands as high as 10(10) cm(-2) acting as quantum dots, while depositio n at 400 degrees C yielded much larger sized islands at low density. I t is also shown that the density and size of the islands are controlla ble by changing the annealing conditions.