TI3-FILMS FABRICATED BY PULSED-LASER DEPOSITION(SAPPHIRE THIN)

Authors
UETSUHARA H NASU T NAKATA Y VASA N OKADA T MAEDA M
Citation
H. Uetsuhara et al., TI3-FILMS FABRICATED BY PULSED-LASER DEPOSITION(SAPPHIRE THIN), JPN J A P 1, 37(5A), 1998, pp. 2530-2531
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
37
Issue
5A
Year of publication
1998
Pages
2530 - 2531
Database
ISI
SICI code
Abstract
Ti3+:sapphire thin films were deposited on sapphire substrates by puls ed-laser deposition (PLD) process. A smoother surface was obtained at lower pressure in a chamber. Their fluorescence characteristics were c onfirmed and the emission characteristics comparable with the bulk Ti3 +:sapphire crystal were obtained.