T. Sakoda et al., RECOVERY OF THE FERROELECTRIC PROPERTIES OF HYDROGEN-DAMAGED IR PB(ZR,TI)O-3/IR CAPACITORS BY POST ANNEALING/, JPN J A P 1, 37(5A), 1998, pp. 2565-2566
In this paper, the recovery of the ferroelectric properties of Ir/Pb(Z
r,Ti)O-3/Ir thin film capacitors damaged by annealing in a hydrogen am
bient has been described. The ferroelectric properties of the capacito
rs markedly degrade as a result of heat treatment in a hydrogen ambien
t at 400 degrees C. These properties can be easily recovered to their
initial state by post annealing using a rapid thermal annealing proces
s in an oxygen ambient at 400 degrees C for 1 min.