EPITAXIAL-GROWTH OF ALUMINUM ON SILICON SUBSTRATES BY METALORGANIC MOLECULAR-BEAM EPITAXY USING DIMETHYL-ETHYLAMINE ALANE

In this paper, the growth process of aluminum on a silicon substrate b y metalorganic molecular beam epitaxy using dimethylethylamine alane h as been described. The crystallographic orientation of the aluminum gr ains strongly depends on the substrate temperature. The epitaxial sing le crystalline (111) Al grains grow on a(lll) Si substrate at a substr ate temperature between 450 and 500 degrees C. The bi-crystalline (110 ) Al grains grow on a (100) Si substrate at the substrate temperature between 350 and 450 degrees C. For a (100) Si substrate, the orientati on of Al is related to the reconstruction of the Si substrate. Further more, the selective growth of Al into 1.5-mu m-diameter via-holes is s hown to be possible.