MELTING INDUCED BY EPITAXIAL STRESS

\Unprecedented phenomena observed in the epitaxial growth of certain z incblende structure III-V compounds in the past several years are acco unted for on the basis of the melting of the epitaxial layer due to th e large magnitude of the epitaxial strain (3.2% to 7.3%). The cases co nsidered include InSb on InAs, GaSb on GaAs, InAs on GaAs and InAs on InP. The molar Gibbs free energy of the stress-free liquid phase is co mpared with that of the stressed solid film. Melting is predicted for temperatures hundreds of degrees Kelvin lower than the atmospheric pre ssure melting point. The resulting molten material is an epitaxially s tabilized supercooled liquid.