INFLUENCE OF GAS ENVIRONMENT ON SYNTHESIS OF SILICON-CARBIDE THROUGH REACTION BETWEEN SILICON AND AMORPHOUS-CARBON IN A SOLAR FURNACE AT PSA (PLATAFORMA-SOLAR-DE-ALMERIA)

Authors
FERNANDES JC ROSA LG MARTINEZ D RODRIGUEZ J SHOHOJI N
Citation
Jc. Fernandes et al., INFLUENCE OF GAS ENVIRONMENT ON SYNTHESIS OF SILICON-CARBIDE THROUGH REACTION BETWEEN SILICON AND AMORPHOUS-CARBON IN A SOLAR FURNACE AT PSA (PLATAFORMA-SOLAR-DE-ALMERIA), Nippon Seramikkusu Kyokai gakujutsu ronbunshi, 106(8), 1998, pp. 839-841
Citations number
8
Categorie Soggetti
Material Science, Ceramics
Journal title
Nippon Seramikkusu Kyokai gakujutsu ronbunshi → ACNP
ISSN journal
09145400
Volume
106
Issue
8
Year of publication
1998
Pages
839 - 841
Database
ISI
SICI code
0914-5400(1998)106:8<839:IOGEOS>2.0.ZU;2-N
Abstract
Silicon carbide (SiC) was synthesized from compacted pellet composed o f Si powders and amorphous carbon powders through heating in solar fur nace under controlled atmosphere (Ar or N-2). Under irradiation of the solar energy flux 1350 kW/m(2) (ca. 1650 degrees C in terms of measur ed temperature) for 30 min, Si was completely converted to SiC in Ar a tmosphere while the conversion was incomplete in N-2.