REACTIONS OF CU(HFAC)(2) AND CO-2(CO)(8) DURING CHEMICAL-VAPOR-DEPOSITION OF COPPER-COBALT FILMS

The reactions of Co-2(CO)(8) and submicron cobalt particles with Cu(hf ac)(2) (hfac = hexafluoroacetylacetonate) were studied in toluene. Rea ctions between these species in the gas phase were studied in a hot-wa ll, parallel-plate chemical vapor deposition (CVD) reactor. Similar re sults were obtained with both methods. The overall chemical reactions can be expressed by the following equations: 2Cu(hfac)(2) + Co-2(CO)(6 ) --> 2Cu + 2Co(hfac)(2) + 8CO and Cu(hfac)(2) + Co --> Cu + Co(hfac)( 2). These results suggested that Coa(CO)(8) is not a good source precu rsor for CVD of Cu-Co binary films when used in conjunction with coppe r(II) and some copper(I) hexafluoroacetylacetonate compounds and that chemical etching of cobalt metal by Cu(hfac)(2) needs to be taken into account when depositing this binary film with copper(I) and copper(II ) hexafluoroacetylacetonate compounds as copper source precursors.