EFFECTS OF COMPOSITIONAL DISORDER UPON ELECTRONIC AND LATTICE PROPERTIES OF GAXIN1-XAS

The empirical pseudopotential method within the virtual crystal approx imation for the entire range of alloy concentrations of cubic GaxIn1-x As is presented. The atomic form factors have been deduced empirically by fitting the band structure of parent compounds to experimental dat a available from the literature. To make allowance for the composition al disorder, a correction to the alloy potential has been introduced. Illustrative results of calculated electronic and lattice properties i ndicate that the contribution of the compositional disorder plays an i mportant role and must be included to obtain a meaningful agreement wi th the experiment. (C) 1998 Elsevier Science B.V.