STRUCTURE AND TRANSPORT-PROPERTIES OF INTEGRATED DISTRIBUTED ELECTRON-CYCLOTRON-RESONANCE GROWN MICROCRYSTALLINE SILICON

A new reactor utilizing electron cyclotron resonance at 2.45 GHz is us ed for the deposition of microcrystalline silicon. Due to its planar g eometry, such deposition process can be scaled for deposition onto lar ge surfaces. Ultraviolet-visible ellipsometry, activation energy measu rements and time resolved microwave conductivity (TRMC) measurements w ere made on the samples. The crystalline volume fraction obtained vari ed between 50% and 80%, as found by ellipsometry, and the growth rate is around 0.3 nm/s. The effective mobility is found to be between 1 an d 6 cm(2) V-1 s(-1). The effect of the preparation conditions, such as substrate temperature, pressure, H-2 dilution and microwave power was investigated. This technology seems to be promising approach for the deposition of mu c-Si based thin film transistors. (C) 1998 Elsevier S cience B.V. All rights reserved.