ACTIVE LAYER PARAMETER OPTIMIZATION FOR HIGH-POWER SI 2 MM PULSED IMPATT DIODE

Authors
ZEMLIAK A CELAYA C GARCIA R
Citation
A. Zemliak et al., ACTIVE LAYER PARAMETER OPTIMIZATION FOR HIGH-POWER SI 2 MM PULSED IMPATT DIODE, Microwave and optical technology letters, 19(1), 1998, pp. 4-9
Citations number
16
Categorie Soggetti
Optics,"Engineering, Eletrical & Electronic
Journal title
Microwave and optical technology letters → ACNP
ISSN journal
08952477
Volume
19
Issue
1
Year of publication
1998
Pages
4 - 9
Database
ISI
SICI code
0895-2477(1998)19:1<4:ALPOFH>2.0.ZU;2-Z
Abstract
On the basis of an IMPATT diode complex mathematical model and an opti mization procedure, results are presented for a diode structure analys is and optimization suitable for a pulsed-mode 2 mm silicon diode. The energy characteristics of the semiconductor structures for high-power pulsed IMPATT diodes with a permanent and complex doping profile are optimized. (C) 1998 John Wiley & Sons, Inc.