METASTABLE ELECTRICAL-TRANSPORT IN CU(IN,GA)SE-2 THIN-FILMS AND ZNO CDS/CU(IN,GA) SE-2 HETEROSTRUCTURES/

Citation
F. Engelhardt et al., METASTABLE ELECTRICAL-TRANSPORT IN CU(IN,GA)SE-2 THIN-FILMS AND ZNO CDS/CU(IN,GA) SE-2 HETEROSTRUCTURES/, Physics letters. A, 245(5), 1998, pp. 489-493
Citations number
15
Categorie Soggetti
Physics
Journal title
ISSN journal
03759601
Volume
245
Issue
5
Year of publication
1998
Pages
489 - 493
Database
ISI
SICI code
0375-9601(1998)245:5<489:MEICTA>2.0.ZU;2-J
Abstract
We ascribe the relaxation of the open circuit voltage in Cu(In,Ga)Se-2 heterojunction solar cells to persistent photoconductivity in the abs orber material. The experimentally observed increase of the open circu it voltage during illumination is accompanied by an increase of the ju nction capacitance resulting from an effective increase of the space c harge density by persistent trapping of photogenerated electrons. (C) 1998 Elsevier Science B.V.