This paper describes the combined use of voltammetry and electrode ill
umination during the anodic growth of Cu2S and CuInS2 films on copper
substrates in sulfide containing KOH medium. The importance of compoun
d stoichiometry in the two systems on the quality of the photoresponse
was brought out in these experiments either by varying the positive p
otential limit (in the Cu-S case) or by In3+ ion addition tin the Cu-I
n-S case) during film growth. The in situ use of electrochemical quart
z crystal microgravimetry and coulometry provided further insights int
o the mechanistic aspects of film growth in the two systems. Further,
Raman spectroscopy evidence is presented in support of a new wurtzite-
type structure for the CuInS2 films grown under galvanodynamic conditi
ons. (C) 1998 Elsevier Science S.A. All rights reserved.