RADIATION EFFECTS IN CSI(TL) CRYSTALS FROM A CONTROLLED GROWTH-PROCESS

Citation
Mah. Chowdhury et al., RADIATION EFFECTS IN CSI(TL) CRYSTALS FROM A CONTROLLED GROWTH-PROCESS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 413(2-3), 1998, pp. 471-474
Citations number
13
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
ISSN journal
01689002
Volume
413
Issue
2-3
Year of publication
1998
Pages
471 - 474
Database
ISI
SICI code
0168-9002(1998)413:2-3<471:REICCF>2.0.ZU;2-J
Abstract
Colorations induced by Co-60 gamma-irradiation have been studied in si x 2.54 cm thick CsI(Tl) samples cut from three crystal boules grown in an experiment on the control of impurities. The growth of a ''sextet' ' structure of bands on the high-energy side of the F-band was observe d in all the samples as doses of gamma-rays were increased. It is spec ulated that the sextet bands may be related to the excited states of t he F centre. It is found that high concentrations of thallium in CsI(T I) always reduce tolerance to radiation. (C) 1998 Elsevier Science B.V . All rights reserved.