AUGER INVESTIGATIONS OF THIN SIC FILMS

Problems of the evaluation of Auger depth profiles of thin SiC layers are caused by a number of effects. These are coverage with an adsorbat e layer, preferential sputtering, the change of the peak shapes by che mical bonding states and the broadening of the interfaces by atomic mi xing, Auger electron escape depth and original surface, interface and sputtering induced roughness. These effects are investigated and their contribution to the degradation of the depth profile is considered. A tomic mixing simulations including electron escape depth correction ar e able to reproduce the Auger depth profiles. In special cases the sim ulation must be convoluted with a resolution function caused by roughn ess. Thus quantitative conclusions about the layer structure, film com position, impurity distribution etc. are possible.