INVESTIGATION OF THE ELECTRON-BEAM-INDUCED TRANSFORMATION OF CU-3 N-FILMS

Homogeneous films of metastable Cu3N were deposited on Si-<100> wafers at 90 degrees C by means of reactive magnetron sputtering ion plating . Under electron bombardment with a focused beam at high current (> 70 0 nA, 15 keV) these films transform into metallic Cu and N-2. The depl etion of N was measured quantitatively by EPMA. Structures with a late ral size of 2 mu m consisting of metallic copper were written into the Cu3N films. AFM surface scans revealed a vertical growth of the colum nar grains of the Cu3N film due to the electron bombardment.