INVESTIGATION OF THE MICROSTRUCTURE OF IRSIX THIN-FILMS

The microstructure of sputtered IrSix thin films was studied as a func tion of initial chemical composition and of annealing treatment. The f ilms were investigated ex-situ by optical microscopy (OM) and transmis sion electron microscopy (TEM). Using OM characteristical differences of brightness in the polarization contrast were used to quantify the p hase fractions. Additionally, the grain size distribution was determin ed. TEM investigations gave evidence for the formation of SiOx and IrS i at high temperature T > 1200 K as a result of the high affinity of s ilicon for oxygen.