M. Quaas et H. Wulff, STRUCTURAL STUDIES OF ITO FILMS USING GRAZING-INCIDENCE X-RAY-DIFFRACTOMETRY, Fresenius' journal of analytical chemistry, 361(6-7), 1998, pp. 617-618
Tin doped indium oxide (ITO) films deposited by e-beam evaporation wer
e investigated using grazing incidence x-ray diffractometry (GIXRD). W
ith increasing doping concentration the x-ray peak positions are shift
ed to lower angles and the line profiles become broader. Rietveld refi
nements show that tin in small concentrations occupies regular In site
s. Line profile analysis reveals that higher tin concentrations cause
an increasing of lattice defects, as grain boundaries and microstrains
. The results of the structural investigations correlate with resistiv
ity measurements.