SURFACE-ANALYTICAL AND MICROANALYTICAL CHARACTERIZATION OF ION-IMPLANTED SI-C-N LAYERS

The development of production methods for carbonitridic hard coatings needs information on depth distributions of the layer components as we ll as on stoichiometries and binding states of the layer constituents. Si-C-N samples were produced by implanting C-13- and N-15-ions into c -Si <111>, and the implanted layers were investigated by means of NRA depth profiling. Afterwards several samples were characterized by surf ace analytical techniques, and XPS- and AES depth profiles were measur ed for typical samples. The measurements confirm the NRA depth profile s and stoichiometries. Furthermore, in all depth ranges C 1s- and N 1s binding energies are observed which are consistent with those of carb onitrides.