REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION REAL-TIME MONITORING OF AN ETCH PROCESS IMPLEMENTED IN MOLECULAR-BEAM EPITAXY TECHNOLOGY - HYDROGEN-CHLORIDE VERSUS GAAS(001) EPILAYERS

Authors
HAMOUDI A SOGAWA T SAITOH T YUMOTO J
Citation
A. Hamoudi et al., REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION REAL-TIME MONITORING OF AN ETCH PROCESS IMPLEMENTED IN MOLECULAR-BEAM EPITAXY TECHNOLOGY - HYDROGEN-CHLORIDE VERSUS GAAS(001) EPILAYERS, Applied physics A: Materials science & processing, 67(3), 1998, pp. 357-359
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Applied physics A: Materials science & processing → ACNP
ISSN journal
09478396
Volume
67
Issue
3
Year of publication
1998
Pages
357 - 359
Database
ISI
SICI code
0947-8396(1998)67:3<357:RHERMO>2.0.ZU;2-G
Abstract
The effective implementation of an etch process in molecular beam epit axy (MBE) technology is confirmed by reflection high-energy electron d iffraction (RHEED). Preliminary experimental results obtained on hydro gen chloride (HCl)-etched GaAs(001) epilayers pointed out the remarkab le ability to reproducibly fine-tune the etch process down to a single monolayer (ML) scale under the usual (2 x 4) arsenic-stabilized surfa ce.