MESFET AND HEMT DESIGN USING FAST PHYSICAL DEVICE SIMULATION

This article demonstrates how fast physical device simulation can be u sed in conjunction with measured data to gain insight into device oper ation and help troubleshoot device designs. The need for device simula tion, which is fast enough to provide a reasonable level of interactio n and has the ability to simulate device S parameters, is addressed. A n approach that offers both these features and shows how device simula tion can be applied to some active layer, cross-sectional geometry and layout design issues is outlined. In each example, measured data are provided to support the simulation results and highlight typical areas where discrepancies between experimental and simulation results occur . These discrepancies are considered to be of great value because they help the process engineer understand what has actually been made and, therefore, assist in solving typical daily problems.