STUDIES OF PHASE-FORMATION IN COSI2 BURIED LAYERS FABRICATED USING ION-IMPLANTATION

The processes of the formation of cobalt disilicide buried layers in s ilicon are studied under different conditions of implantation with Co. In particular, the effects of the implantation dose and the postimpla ntation annealing temperature on the state of the Co-implanted layer a re considered. Two types of heteroepitaxial Si/CoSi2/Si structures are obtained with the conducting layers of thicknesses 70 and 90 nm burie d at the depths 80 and 10 nm, respectively.