CRYSTALLOGRAPHIC DATA OF NEW TERNARY LA2SB-TYPE GDSCSI, GDSCGE, TBSCGE COMPOUNDS, TI5GA4-TYPE RSCSI (R=TB-TM) AND RSCGE (R=DY-TM) COMPOUNDS

investigations made by powder X-ray diffraction on twelve new ternary RScSi and RScGe compounds (R=Gd-Tm) are reported. The GdScSi (a = 0.42 34(1) nm, c = 1.5443(2) nm), GdScGe (a = 0.4256(1) nm, c = 1.5524(2) n m) and TbScGe (a = 0.4240(1) nm, c = 1.5410(2) nm) crystallize in the tetragonal La2Sb-type structure (space group 14/mmm). The compounds Tb ScSi (a = 0.8185(2) nm, c = 0.6035(1) nm), DyScSi (a = 0.8159(2) nm, c = 0.6028(1) nm), HoScSi (a = 0.8136(1) nm, c = 0.6009(1) nm), ErScSi (a = 0.8109(1) nm, c = 0.5987(1) nm) and TmScSi (a = 0.8033(2) nm, c = 0.5919(1) nm), DyScGe (a = 0.8226(2) nm, c = 0.6093(1) nm), HoScGe (a = 0.8197(2) nm, c = 0.6067(1) nm), ErScGe (a = 0.8178(1) nm, c = 0.60 53(1) nm), TmScGe (a = 0.8103(5) nm, c = 0.5971(3) nm) crystallize in the hexagonal Ti5Ga4-type structure (space group P6(3)/mcm). (C) 1998 Elsevier Science S.A. All rights reserved.