FABRICATION OF MULTILAYER SUBSTRATES FOR HIGH-ASPECT-RATIO SINGLE-CRYSTALLINE MICROSTRUCTURES

Citation
C. Gui et al., FABRICATION OF MULTILAYER SUBSTRATES FOR HIGH-ASPECT-RATIO SINGLE-CRYSTALLINE MICROSTRUCTURES, Sensors and actuators. A, Physical, 70(1-2), 1998, pp. 61-66
Citations number
17
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
ISSN journal
09244247
Volume
70
Issue
1-2
Year of publication
1998
Pages
61 - 66
Database
ISI
SICI code
0924-4247(1998)70:1-2<61:FOMSFH>2.0.ZU;2-2
Abstract
This paper reports a new method for making multi-layer substrates (MLS ) for high aspect ratio single crystalline movable microstructures usi ng a group of technologies, such as direct wafer bonding (DWB), chemic al mechanical polishing (CMP), and reactive ion etching (RIE). As a fi rst example, Si-SiO2-polySi-SiO2-Si sandwich wafers were fabricated us ing CMP and DWB. Subsequently, free-standing micro cantilever beams an d double side clamped bridges were fabricated on these sandwich wafers using a one-run self-aligned RIE process, where polysilicon was used as the sacrificial layer. Polishing and bonding of low pressure chemic al vapour deposition (LPCVD) polysilicon were studied. An LPCVD Si3+xN 4 polishing stop layer technique was presented to accurately control t he final thickness of the device layer. The uniformity of the device l ayer was improved as well. (C) 1998 Elsevier Science S.A. All rights r eserved.