LOW-TEMPERATURE DIRECT BONDING OF SILICON AND SILICON DIOXIDE BY THE SURFACE ACTIVATION METHOD

We have investigated low-temperature bonding of Si and SiO2 by the sur face activation method in vacuum. In the method, Ar beam etching is us ed to create a clean surface which has strong bonding ability. The spe cimens are bonded in the vacuum without exposing them to the atmospher e. The strength of Si/Si bonding prepared at room temperature by the m ethod is equivalent to the bulk strength. SiO2/SiO2 bonding by the met hod is twice as strong as conventional bonding before annealing. In ad dition, the bonding prepared by Ar beam is stronger than that prepared by reactive molecule beam etching such as H2O and NH3. The influence of surface oxidation was examined by exposing an etched Si surface to residual gas in the vacuum chamber. Adsorption of reactive molecules s uch as H2O on the etched surface causes reduction of bonding strength, whereas Ar gas does not affect the bonding. These results mean that a clean surface etched by Ar beam has strong bonding ability even at ro om temperature. (C) 1998 Elsevier Science S.A. All rights reserved.