SPECTROELLIPSOMETRIC CHARACTERIZATION OF ION-IMPLANTED SEMICONDUCTORSAND POROUS SILICON

In the past years spectroscopic ellipsometry (SE) was applied to mater ials science problems as an optical technique for non destructive dept h profiling and characterization of multilayer structures and interfac es with considerable success. The measured optical response of the mul ticomponent and/or multilayer structure under investigation can only b e related to actual material properties by a model calculation. The su ccessful application of ellipsometry is not only determined by the qua lity of the measurements, but more importantly by the quality of the o ptical model. Several examples for the different application of SE are reviewed. Two recent examples of multilayer analysis illustrate possi bilities: in the first example damage created by ion implantation in s ingle-crystalline silicon and in silicon carbide was characterized usi ng ellipsometry and Rutherford Backscattering Spectrometry (RBS) in co mbination with channeling. In the second example electrochemically pre pared porous silicon layers (PSL) were investigated by SE.