Jp. Zhang et al., THE EFFECT OF BURIED ALXGA1-XN ISOLATING LAYERS ON THE TRANSPORT-PROPERTIES OF GAN DEPOSITED ON SAPPHIRE SUBSTRATE BY MOLECULAR-BEAM EPITAXY USING NH3, Journal of crystal growth, 192(3-4), 1998, pp. 471-474
It is believed that the highly dislocated region near the GaN/sapphire
interface is a degenerate layer. In this paper a direct evidence for
such a proposal is presented. By inserting a buried AlxGa1-xN (x > 0.5
) isolating layer to separate the interface region from the bulk regio
n, the background electron concentration can be significantly reduced,
while care must be taken to guarantee that there is no degrading of H
all mobility when choosing the thickness of the isolating layer. (C) 1
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