TUNNELING IN HTS JUNCTIONS

The effects caused by the layered structure of high-temperature superc onductors (HTS) ought to be taken into consideration at the time of co nstructing different HTS junction devices. The authors demonstrate thi s by studying tunneling phenomena in HTS, The tunneling current-voltag e characteristics of different structures such as ''Normal Metal-Insul ator-HTS'' (NIS-structure) and ''HTS-Insulator-HTS'' (SIS-structure) a re calculated. The real layered structure of I-ITS is taken into accou nt and corresponding peculiarities on I(V) are obtained. The authors h ave analyzed different types of contacts which are realized in the NIS - and SIS-junctions. The contributions of the superconducting and norm al layers of HTS to the tunneling current of NIS- and SIS-structures a re found.