An injection distributed-feedback vertical-cavity surface-emitting las
er (VCSEL) with tunnel junctions served as quasi-Ohmic intercontacts (
tunnel-junction-connected distributed-feedback VCSEL) is proposed. A p
eriodic structure of vertically stacked double-heterostructure laser d
iodes connected by low-resistance tunnel junctions forms a vertical di
stributed-feedback (DFB) laser medium. To minimize the threshold, the
DFB structure is placed in a Fabry-Perot cavity designed to match gain
layers with the maximums of the optical mode, and the tunnel junction
s-with its minimums. The passive regions with tunnel junctions provide
effective vertical injection into each active region of this multiple
-active-region laser. This DFB VCSEL is expected to have an improved p
erformance, specifically, reduced threshold current and heightened out
put power. (C) 1998 American Institute of Physics.