MULTICOLORED LIGHT EMITTERS ON SILICON SUBSTRATES

We demonstrate the operation of multicolored light emitting diodes (LE Ds) on a silicon wafer using ultraviolet/violet GaN LEDs grown by mole cular beam epitaxy on Si(lll) in conjunction with organic dye based co lor converters. These organic converters, applied on top of the nitrid e diodes, absorb the nitride LED electroluminescence at similar to 360 nm, and fluoresce in the green (similar to 530 nm), and orange (simil ar to 600 nm). In this fashion, multicolored light emitters may be mad e to operate side by side and monolithically on the same Si wafer in a n approach that may be attractive for miniature GaN based full color d isplays. (C) 1998 American Institute of Physics.