HIGH-TEMPERATURE OPTICALLY PUMPED LASING IN ZNMGSSE ZNSE HETEROSTRUCTURES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY/

Lasing and optical properties of ZnMgSSe/ZnSe-, ZnMgSSe/ZnSSe/Znse-, a nd ZnMgSSe/ZnMgSSe/ZnSe-based single- and multiple-quantum-well hetero structures grown by metalorganic vapor phase epitaxy were studied, and the characteristics were found to depend on the excitation intensity I-exe, temperature, and well width. Laser action under transverse opti cal pumping was achieved only for well widths L(z)greater than or equa l to 4 nm and optical confinement factors Gamma>0.04. In separate conf inement heterostructures, lasing with the lowest threshold (I-thr = 10 -30 kW/cm(2) at T = 78 K) was achieved and device characteristics were studied up to T = 577 K. (C) 1998 American Institute.