INTERMEDIATE TEMPERATURE GROWN GAAS ALGAAS PHOTODETECTOR WITH LOW DARK CURRENT AND HIGH-SENSITIVITY/

A photodetector in which Schottky metal laterally contacts the molecul ar beam epitaxy grown heterointerface of intermediate-temperature GaAs and Al0.24Ga0.76As is reported. The device processed on 400 degrees C shows very low dark current, less than 25 fA/mu m(2) (0.5 pA/mu m), w ith a high de responsivity of about 10 A/W at low optical power levels . The device is process compatible with high electron mobility transis tor technology. (C) 1998 American Institute of Physics.