SPIN TRANSPORT IN GAAS

We present a spectroscopic method for studying spin transport in semic onductors. Our time-resolved experiments have an important implication for spin electronics as they show that spin-polarized electron drift is possible in semiconductors over typical device lengths in high elec tric fields. We demonstrate an almost complete conservation of the ori entation of the electron spin during transport in GaAs over a distance as long as 4 mu m and fields up to 6 kV/cm. (C) 1998 American Institu te of Physics.