BARRIER HEIGHT ENHANCEMENT IN WSIX GAAS SCHOTTKY DIODES BY RAPID THERMAL ANNEALING/

Authors
OSVALD J LALINSKY T
Citation
J. Osvald et T. Lalinsky, BARRIER HEIGHT ENHANCEMENT IN WSIX GAAS SCHOTTKY DIODES BY RAPID THERMAL ANNEALING/, Journal of materials science. Materials in electronics, 4(4), 1993, pp. 267-270
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Journal of materials science. Materials in electronics → ACNP
ISSN journal
09574522
Volume
4
Issue
4
Year of publication
1993
Pages
267 - 270
Database
ISI
SICI code
0957-4522(1993)4:4<267:BHEIWG>2.0.ZU;2-I
Abstract
The influence of rapid thermal annealing on WSi2/GaAs and WSi0.6/GaAs Schottky diodes was studied by means of Rutherford backscattering spec troscopy (RBS), particle induced X-ray emission spectroscopy (PIXE), X -ray diffraction (XRD) analysis and current-voltage electrical measure ment. Despite the amorphicity of the layers remaining after annealing and only relatively minor changes in RBS and PIXE spectra, large barri er enhancements were registered, especially for WSi2/GaAs diodes.For a n explanation of this effect, the barrier height inhomogeneity concept is used.